GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance
نویسندگان
چکیده
1 Equipe Mixte CEA-CNRS Nanophysique et Semiconducteurs, INAC/SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France 2 Action OptoGaN, Institut d’Electronique Fondamentale (CNRS UMR 8622), Université Paris-Sud, 91405 Orsay Cedex, France 3 Institute of Physics, University of Neuchatel, 1 A.-L. Breguet, CH-2000 Neuchatel, Switzerland 4 Institut für Kristallzüchtung, Max-Born-Strasse 2, D-12489 Berlin, Germany 5 Walter Schottky Institute and Physics Department, Technische Universität München, Am Coulombwall 3, D-85748 Garching, Germany 6 Equipe Mixte CEA-CNRS Nanophysique et Semiconducteurs, Institut Néel, CNRS Département Nano, 25 Avenue des Martyrs, 38042 Grenoble Cedex 9, France
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